对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRFBG32-002PBF | Infineon Technologies AG | 2.1A, 1000V, 6.7ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFP7537PBF | Infineon Technologies AG | Power Field-Effect Transistor, | ¥19.0157 | |||||
AD | IRF6644TRPBF | Infineon Technologies | MOSFET/FET,IRF6644 - 12V-300V N-Channel Power MOSFET | |||||
IRF9388TRPBF | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | ¥6.6582 | |||||
IRF5M4905SCVC | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 55V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | - | |||||
IRFR3411PBF | Infineon Technologies AG | Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | - | |||||
IRFI1010N-105 | Infineon Technologies AG | Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFI1010N-105PBF | Infineon Technologies AG | 49A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFY340PBF | Infineon Technologies AG | Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | - | |||||
IRFIZ34N-029PBF | Infineon Technologies AG | 19A, 55V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | - | |||||
IRF1405LPBF | Infineon Technologies AG | Power Field-Effect Transistor, | - | |||||
IRFI634-010 | Infineon Technologies AG | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFI634-010PBF | Infineon Technologies AG | 5.6A, 250V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFR7746PBF | Infineon Technologies AG | Power Field-Effect Transistor, | - | |||||
IRFI3205-002 | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFI540N-024PBF | Infineon Technologies AG | 18A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFI540N-024 | Infineon Technologies AG | Power Field-Effect Transistor, 18A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | - | |||||
IRFHS8242TRPBF | Infineon Technologies AG | Power Field-Effect Transistor, 9.9A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-6 | ¥4.0528 | |||||
IRFZ30-006 | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRF833-012 | Infineon Technologies AG | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFIZ44-011 | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - |